LG GD910, is a successor to PRADA, the first full touch screen phone released by LG in 2007. Designing such a small touchscreen like the one on the LG GD910 Touch Watch Phone is far more difficult than designing a larger one. In order to be usable, the screen has to be far more precise and far more sensitive than the technology thats currently available. For the LG GD 910 Touch Watch Phone, we were able to develop a very high-resolution 1.4-inch screen that is extremely responsive to user commands and easy to read.
LG GD910 is not only quite small in size, it is also equipped with most of the features offered by the mobile phones. The watch phone is compatible with 3G HSDPA networks, videos, MP3 player, etc. Besides, LG GD910s compatibility with blue tooth sets it apart from other watch phones.
Sunday, December 27, 2009
Nanowires Are Key To Future Transistors And Electronics:
A new generation of ultrasmall transistors and more powerful computer chips using tiny structures called semiconducting nanowires are closer to reality after a key discovery by researchers at IBM, Purdue University and the University of California at Los Angeles.
The researchers have learned how to create nanowires with layers of different materials that are sharply defined at the atomic level, which is a critical requirement for making efficient transistors out of the structures.
Having sharply defined layers of materials enables you to improve and control the flow of electrons and to switch this flow on and off, said Eric Stach, an associate professor of materials engineering at Purdue.
Electronic devices are often made of "heterostructures," meaning they contain sharply defined layers of different semiconducting materials, such as silicon and germanium. Until now, however, researchers have been unable to produce nanowires with sharply defined silicon and germanium layers. Instead, this transition from one layer to the next has been too gradual for the devices to perform optimally as transistors.
Whereas conventional transistors are made on flat, horizontal pieces of silicon, the silicon nanowires are "grown" vertically. Because of this vertical structure, they have a smaller footprint, which could make it possible to fit more transistors on an integrated circuit, or chip.
But first we need to learn how to manufacture nanowires to exacting standards before industry can start using them to produce transistors.
Nanowires might enable engineers to solve a problem threatening to derail the electronics industry. New technologies will be needed for industry to maintain Moore's law, an unofficial rule stating that the number of transistors on a computer chip doubles about every 18 months, resulting in rapid progress in computers and telecommunications. Doubling the number of devices that can fit on a computer chip translates into a similar increase in performance. However, it is becoming increasingly difficult to continue shrinking electronic devices made of conventional silicon-based semiconductors.
In something like five to, at most, 10 years, silicon transistor dimensions will have been scaled to their limit.
Transistors made of nanowires represent one potential way to continue the tradition of Moore's law.
The researchers used an instrument called a transmission electron microscope to observe the nanowire formation. Tiny particles of a gold-aluminum alloy were first heated and melted inside a vacuum chamber, and then silicon gas was introduced into the chamber. As the melted gold-aluminum bead absorbed the silicon, it became "supersaturated" with silicon, causing the silicon to precipitate and form wires. Each growing wire was topped with a liquid bead of gold-aluminum so that the structure resembled a mushroom.
Then, the researchers reduced the temperature inside the chamber enough to cause the gold-aluminum cap to solidify, allowing germanium to be deposited onto the silicon precisely and making it possible to create a heterostructure of silicon and germanium.
The researchers have learned how to create nanowires with layers of different materials that are sharply defined at the atomic level, which is a critical requirement for making efficient transistors out of the structures.
Having sharply defined layers of materials enables you to improve and control the flow of electrons and to switch this flow on and off, said Eric Stach, an associate professor of materials engineering at Purdue.
Electronic devices are often made of "heterostructures," meaning they contain sharply defined layers of different semiconducting materials, such as silicon and germanium. Until now, however, researchers have been unable to produce nanowires with sharply defined silicon and germanium layers. Instead, this transition from one layer to the next has been too gradual for the devices to perform optimally as transistors.
Whereas conventional transistors are made on flat, horizontal pieces of silicon, the silicon nanowires are "grown" vertically. Because of this vertical structure, they have a smaller footprint, which could make it possible to fit more transistors on an integrated circuit, or chip.
But first we need to learn how to manufacture nanowires to exacting standards before industry can start using them to produce transistors.
Nanowires might enable engineers to solve a problem threatening to derail the electronics industry. New technologies will be needed for industry to maintain Moore's law, an unofficial rule stating that the number of transistors on a computer chip doubles about every 18 months, resulting in rapid progress in computers and telecommunications. Doubling the number of devices that can fit on a computer chip translates into a similar increase in performance. However, it is becoming increasingly difficult to continue shrinking electronic devices made of conventional silicon-based semiconductors.
In something like five to, at most, 10 years, silicon transistor dimensions will have been scaled to their limit.
Transistors made of nanowires represent one potential way to continue the tradition of Moore's law.
The researchers used an instrument called a transmission electron microscope to observe the nanowire formation. Tiny particles of a gold-aluminum alloy were first heated and melted inside a vacuum chamber, and then silicon gas was introduced into the chamber. As the melted gold-aluminum bead absorbed the silicon, it became "supersaturated" with silicon, causing the silicon to precipitate and form wires. Each growing wire was topped with a liquid bead of gold-aluminum so that the structure resembled a mushroom.
Then, the researchers reduced the temperature inside the chamber enough to cause the gold-aluminum cap to solidify, allowing germanium to be deposited onto the silicon precisely and making it possible to create a heterostructure of silicon and germanium.
The World's First Programmable Quantum Computer:
With only a few intense lasers, electrodes and some ultracold ions, researchers at the University of Sussex in Brighton, England, have been able to build the first programmable quantum computer.
What makes this experiment different is that this new system is able to perform more than 150 random processing routines.
For Quantum computers to become more useful, these machines should be able to be progammed just like a normal computer can be programmed. This will of course mean that the system will be able to run many different programs. Up until now, earlier versions of quantum computers have been very restricted with regards to the amount of specific tasks they could perform.
The new study is "a powerful demonstration of the technological advances towards producing a real-world quantum computer," says quantum physicist Winfried Hensinger of the University of Sussex in Brighton, England. The researchers, led by David Hanneke of the National Institute of Standards and Technology in Boulder, Colo. built the computer based on two cooled beryllium ions with a temperature of just above zero.
The ions formed the quantum bits, or qubits, analogous to the bits in normal computers represented by 0s and 1s, and were trapped by a magnetic field on a gold-plated aluminum chip. To perform the processing operations, short laser bursts were used to manipulate the beryllium ions. Magnesium ions kept the beryllium ions stationary, and from getting hot. It is believed that this system may be applied to larger-scale systems.
The system built was mostly experimental, but what is important is the fact that the principal may be applied on a larger scale, and therefore become practical.
SST Unveils World's First Low-Voltage, High-Speed Quad I/O Serial Flash Memory:
SST (Silicon Storage Technology, Inc.), one of the leaders in the flash memory technology announced worlds first 1.8V, high-speed
quad-bit serial flash memory.
The memory includes an 80 MHz operating frequency, and 26 WF Series Serial Quad I/O (SQI) family of 4-bit multiplexed I/O serial interface
devices, to activate XIP (execute in place capability).
Once XIP is enabled, programs do not require code shadowing on SRAM. They can be executed directly from the flash memory. Besides, the memory functions efficiently even at a low power consumption.
"The mobile phone industry, in particular, has been yearning for a serial memory solution with high performance and extremely low power consumption and we are proud to be the first in the industry to achieve this highly challenging accomplishment," said Douglas Lee, vice president, Memory Products, SST.
"In addition to performance and power consumption advantages, our new 26WF Series offers designers of ultra low-cost mobile handsets with a low pin count, quad I/O protocol serial flash memory that is straightforward and easy to integrate, enabling continued system cost reduction. Today's announcement solidifies our leadership in low-voltage, high-speed serial flash memory and underscores our commitment to providing customers with the solutions they need to achieve their design goals."
The 26 WF Series SQI devices are based on a number of advanced features. Small block sectors on the chip may be erased within 25 ms whereas it takes only 50 ms to erase the entire chip. The write suspend and resume operations make memory manipulation remarkably easy and effective. 26WF Series devices provide software write protection to ensure code security. Besides, the secure ID area can be programmed only once.
What makes this experiment different is that this new system is able to perform more than 150 random processing routines.
For Quantum computers to become more useful, these machines should be able to be progammed just like a normal computer can be programmed. This will of course mean that the system will be able to run many different programs. Up until now, earlier versions of quantum computers have been very restricted with regards to the amount of specific tasks they could perform.
The new study is "a powerful demonstration of the technological advances towards producing a real-world quantum computer," says quantum physicist Winfried Hensinger of the University of Sussex in Brighton, England. The researchers, led by David Hanneke of the National Institute of Standards and Technology in Boulder, Colo. built the computer based on two cooled beryllium ions with a temperature of just above zero.
The ions formed the quantum bits, or qubits, analogous to the bits in normal computers represented by 0s and 1s, and were trapped by a magnetic field on a gold-plated aluminum chip. To perform the processing operations, short laser bursts were used to manipulate the beryllium ions. Magnesium ions kept the beryllium ions stationary, and from getting hot. It is believed that this system may be applied to larger-scale systems.
The system built was mostly experimental, but what is important is the fact that the principal may be applied on a larger scale, and therefore become practical.
SST Unveils World's First Low-Voltage, High-Speed Quad I/O Serial Flash Memory:
SST (Silicon Storage Technology, Inc.), one of the leaders in the flash memory technology announced worlds first 1.8V, high-speed
quad-bit serial flash memory.
The memory includes an 80 MHz operating frequency, and 26 WF Series Serial Quad I/O (SQI) family of 4-bit multiplexed I/O serial interface
devices, to activate XIP (execute in place capability).
Once XIP is enabled, programs do not require code shadowing on SRAM. They can be executed directly from the flash memory. Besides, the memory functions efficiently even at a low power consumption.
"The mobile phone industry, in particular, has been yearning for a serial memory solution with high performance and extremely low power consumption and we are proud to be the first in the industry to achieve this highly challenging accomplishment," said Douglas Lee, vice president, Memory Products, SST.
"In addition to performance and power consumption advantages, our new 26WF Series offers designers of ultra low-cost mobile handsets with a low pin count, quad I/O protocol serial flash memory that is straightforward and easy to integrate, enabling continued system cost reduction. Today's announcement solidifies our leadership in low-voltage, high-speed serial flash memory and underscores our commitment to providing customers with the solutions they need to achieve their design goals."
The 26 WF Series SQI devices are based on a number of advanced features. Small block sectors on the chip may be erased within 25 ms whereas it takes only 50 ms to erase the entire chip. The write suspend and resume operations make memory manipulation remarkably easy and effective. 26WF Series devices provide software write protection to ensure code security. Besides, the secure ID area can be programmed only once.
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